M/A-COM has introduced the NPT2024, a wideband transistor that operates from DC to 2.7 GHz. This transistor has been developed on MACOM’s proprietary Gallium Nitride on Silicon (GaN on Si) process. It supports CW, pulsed and linear operation, boasting output levels up to 200 W.
The NPT2024 provides 16 dB of gain and 60% drain efficiency at 1500 MHz. This 50 V HEMT D-Mode transistor is available in an industry standard plastic package with a bolt down flange. It is ideally suited for defense communications, land mobile radio, avionics, wireless infrastructure, ISM applications and UHF/L-band radar. This product is sampling now.
Delivering performance that rivals expensive GaN on Silicon Carbide (GaN on SiC) at a projected volume production cost structure below that of incumbent LDMOS technology, 4th generation GaN (Gen4 GaN) is positioned to break the final technical and commercial barriers to mainstream GaN adoption. Gen4 GaN delivers greater than 70% peak efficiency and 19 dB gain for modulated signals at 2.7 GHz, which is similar to GaN on SiC technologies, and more than 10 percentage points greater efficiency than LDMOS. It also delivers power density that is more than four times that of LDMOS.
