Power GaN & RF GaN markets maintain their growth trajectories to beyond US $2.45 billion and US $1.9 billion, in 2029 respectively. This comes with a significant cumulative annual growth rate (CAGR) of 46% and 10%, respectively, in the period 2023-2029. All segments of the power GaN market will see continued growth, with the consumer segment dominating over the next 5 years. Yole Group anticipates the RF GaN market will gradually gain momentum in 2024, surpassing US$1.9 billion by 2029, driven by applications including telecom infrastructure and satellite communications.
On June 19 at 5.00 PM CET / 8.00 AM PST, industry experts from Lam Research and Yole Group will delve into the key market trends and drivers and present solutions for high-volume manufacturing that are propelling GaN technologies to new heights. Click here to register.
This webinar, featuring experts from Lam Research Corp. and the Yole Group is a must-attend for semiconductor professionals seeking to understand the future of GaN devices, their market drivers, and solutions for high-volume manufacturing.
“Demonstrating Lam’s continuous innovation in the Specialty Technologies sector, we are addressing the challenges of high-volume GaN device fabrication by leveraging our production-proven, solutions. We have focused on GaN-on-Si based HEMT and monolithically integrated IC devices for power management applications,” explains Dr. David Haynes, Vice President, Specialty Technologies, Lam Research. “We are already applying the learning to key GaN-on-Si RF applications and to other GaN-based devices such as micro-LEDs. During this online event, presented in collaboration with Yole Group, we will review the capabilities that Lam has developed to support GaNdevice manufacturing and highlight the major benefits they are delivering to our customers.”
Click here to register for this Webinar.
