TransEON, a Canadian stealth-mode startup, has developed a new MOSFET-based GaN-on-SiC foundry process that enables fabrication of cutting-edge transistors and MMICs with significant benefits over existing GaN HEMT technology. Key advantages include up to 4x higher operating voltage and RF power density at frequencies ranging from HF up to W-band.
The process includes standard MMIC features to provide turnkey compatibility with existing GaN processes, including through-substrate vias, integrated passives, and Au-plated microstrip on thinned SiC. Other advantages of this offering include full process customization, high-touch design and NRE services, ITAR and ITAR-free compatibility, as well as industry-leading cycle times and multi-project wafer access.
The GaN MOSFET process, the first commercial platform of its kind, was formally unveiled at IMS 2024 in Washington, D.C. Click here to view everything RF's comprehensive coverage of IMS 2024.
