Ampleon has developed an RF power transistor that is optimized with optimal CW/pulsed power and efficiency to support applications in cooking, industrial, scientific and medical over frequencies from 2400 MHz to 2500 MHz. The CLF24H4LS300P delivers an average output power of 300 W with a power gain of 14 dB and a drain efficiency of 74% over a broad frequency band.
This transistor is manufactured using GaN-on-SiC HEMT technology and has internally-matched input ports. It has a drain-source voltage of 50 V. This RoHS-compliant HEMT is available in a high-performance ceramic surface-mount package that measures 20.02 x 4.72 mm.
Click here to learn more about this new GaN-on-SiC HEMT transistor from Ampleon.
