United Monolithic Semiconductors (UMS) has introduced the CHA7362-QWA, which is a high-power amplifier IC that operates in the Ka-band from 27.5 to 31 GHz. This amplifier is dedicated to satellite communications and 5G infrastructure applications. It delivers a output power of 8 W with a small signal gain of 26 dB and a power-added efficiency (PAE) of 27%. This amplifier also has an IMD3 of -25 dBc and an ACPR of less than -30 dBc.
The CHA7362-QWA is fabricated based on GaN-on-SiC process technology. This PA requires a DC supply of 20 V and consumes 280 mA of drain current and is internally-matched to 50 Ohms. It has integrated electrostatic discharge (ESD) protection features for safety and reliability. This RoHS-compliant amplifier is packaged in a low-cost surface-mount QFN package that measures 6 x 5 mm.
This high power amplifier is also provided with an evaluation board that is compatible with the proposed footprint. The board can be used to test and validate this power amplifier to ensure proper operation.
Click here to learn more about this new GaN-on-SiC power amplifier from UMS.
