Qorvo has introduced six new 50 Volt Gallium Nitride (GaN) Transistors that have been designed to optimize power performance for commercial and defense radars, communications systems and avionics.
This new family of 50V GaN transistors improves system performance by offering more power gain and power-added efficiency. They can thus enable defense equipment such as phased array radars, to deliver higher performance while managing size, cost and power.
These GaN transistors offers significant operational and system cost savings from greater system-level efficiency. The small device size and higher impedance input/output leads help optimize board designs for radar, communications, avionics, wideband amplifiers and test instrumentation.
The QPD1009 and QPD1010 are now available in low-cost 3x3mm plastic QFN packages, while the QPD1008 (L) and QPD1015 (L) are now available in industry standard, thermally enhanced NI-360 air cavity ceramic packages, in eared and earless versions. This family of GaN transistors operates from 10W up to 125W power levels.
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Product
|
Psat (W)
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Freq (GHz)
|
Output Power (P3dB)
|
PAE (%)
|
SS Gain (dB)
|
Packaging (mm)
|
|
QPD1009
|
15
|
DC-4
|
42
|
72
|
24
|
3x3 QFN
|
|
QPD1010
|
10
|
DC-4
|
40
|
70
|
25
|
3x3 QFN
|
|
QPD1008
|
125
|
DC-3.2
|
51
|
70
|
18
|
Earless NI-360
|
|
QPD1008L
|
125
|
DC-3.2
|
51
|
70
|
18
|
Eared NI-360
|
|
QPD1015
|
65
|
DC-3.7
|
48
|
70
|
20
|
Earless NI-360
|
|
QPD1015L
|
65
|
DC-3.7
|
48
|
70
|
20
|
Eared NI-360
|
Their GaN products will be showcased at Booth 839 at the IEEE International Microwave Symposium (IMS), from May 24-26 in San Francisco, Calif.
