At the IEEE International Microwave Symposium (IMS 2016) Microsemi is showcasing 15 new products from their RF, millimeter wave integrated circuits (ICs), monolithic microwave integrated circuits (MMICs), ultra-low power sub-GHz transceivers and high performance WLAN monolithic radio frequency integrated circuits (RFICs) portfolio. With a broad product offering spanning the DC to 140 GHz frequency range, these new devices are ideal for the defense, communications, instrumentation, industrial and aerospace industries.
The products to be showcased include:
GaN HEMT RF Power Transistors and Drivers Cover L-Band to 750 Watts
Their expanding family of RF power transistors based on gallium nitride (GaN) high electron mobility transistor (HEMT) on silicon carbide (SiC) technology includes six new L-band RF power transistors and drivers rated between 120 watts (W) and 750W. These new 1214GN-750V, 1214GN-120E/EL/EP, 1011GN-125E/EL/EP, 1011GN-250E/EL/EP, 1416GN-600V, and 1416GN-120E/EL/EP RF power transistors and drivers deliver outstanding size, weight, power and efficiency performance in a wide range of radar, avionics and communications applications with compact packaging options.
Monolithic SPST and SPDT PIN Switch Elements Deliver Up to 100W Through 6 GHz
Their MPS2R10-606, MPS4103-607 and MPS2R11-608 are single-chip silicon monolithic series-shunt elements designed with minimal parasitic inductance to provide optimum insertion loss of less than 0.3 decibel (dB), 55 dB of isolation and 500 nanosecond (nS) switching times over the entire 100 MHz to 6 GHz frequency range. These products are ideal replacements for the conventional shunt mounted chip and series mounted beam lead PIN diode normally used in the manufacture of broadband microwave switches. Capable of switching up to 100W of continuous wave (CW) power, these devices are ideal for transmit/receive (T/R) and high power switching in military and commercial radio, radar and cellular infrastructure applications. These products meet RoHS requirements per EU directive 2002/95/EC.
New Series of Low Cost MELF PIN Diodes Feature 2 GHz Switching, 500V Breakdown Voltage
They have introduced UMX502-UMX812, a new series of low cost, metal electrode leadless face bonded (MELF) high power, ceramic PIN diodes. This series of PIN diodes are hermetically sealed, high reliability surface mount packaged devices with full face bonded chips and very low inductance construction. These MELF PIN diodes are ideal for a wide range of general purpose and broadband switching, attenuating and phase-shifting applications from high frequency through 2 GHz, as well as for use in MRI coil switching and other low magnetic applications. These RoHS-compliant products meet the requirements of EU directive 2002/95/EC, and are fully compatible with pick and place and solder reflow manufacturing techniques. UMX502-UMX812, are ESD HBM Class 2 products, and exhibit breakdown voltage ratings up to 500 volts (V).
Low Sleep State Current Sub-GHz Transceiver
Operating in the 779-965 MHz unlicensed industrial, scientific and medical (ISM) frequency bands, the ZL70550 consumes only 2.8 mA while transmitting at -10 dBm output power and a similar 2.5 mA during reception. It offers an extremely low sleep state current of 10 nanoamperes (nA), making it ideal for low-duty cycle applications. Microsemi addresses the high cost of battery replacement issues common with medical and industrial customers by leveraging the intellectual property from its ultra-low power implantable pacemakers and hearing aids to provide the lowest power wireless link in an extremely small form factor that is easy to deploy.
Wi-Fi High-Linearity Power Amplifiers and Front-End Modules
They have an expanding portfolio of world-class customer premise equipment (CPE) products for Wi-Fi 802.11 a/b/g/n/ac applications. Designed for medium power applications, new 5 GHz and 2 GHz single band front-end modules (FEMs) are optimized for long packet EVM performance ideally suited for wireless client set-top box, gateway, and 4K ultra high-definition (HD) platforms. Where cost and size are critical, a dual-band (5GHz/2GHz) FEM will be offered in compact 4 mm x 3 mm 28 pin QFN package, using 3.3V supply, ideal for smart television and over-the-top (OTT) content platforms.
Microsemi also offers a family of high-linearity power amplifiers, featuring the latest in 2 GHz amplifiers, delivering +23 dBm of linear power with market leading current consumption, critical for thermal management for today’s newer 4 x 4 and 8 x 8 multiuser multiple input, multiple output (MIMO) platforms.
Stop by the Microsemi Booth at IMS 2016 to learn more.
