At the International Microwave Symposium 2016 (IMS) in San Francisco last week, Northrop Grumman announced the availability of two new gallium nitride (GaN) power amplifiers. These amplifiers offer high power outputs for the newly released 24 to 28 GHz frequencies, for applications including satellite communications terminals, point–to-point and point-to-multipoint digital radios.
The first new product, APN243, is a balanced high power amplifier that offers 20 dB of linear gain and a saturated output power of 40.5 dBm with PAE > 27%. The second, APN244, is the single ended version of the APN243 that also offers 20 dB of linear gain, provides a saturated output power of 38 dBm with PAE > 31%.
At IMS Northrop Grumman also exhibited high power and high efficiency chipsets for Ku-Band, Ka-Band, V-Band, Q-Band, E- and W-band communications, and on optimizing ground, airborne and space-based communication links using their advanced semiconductor products and technologies.
