Fairview Microwave has released a brand new line of solid state GaN amplifiers. These new GaN power amplifiers offer designers a unique solution of off-the-shelf components, typically requiring months of lead time to acquire.
These rugged connectorized amplifier designs have the advantage of high output load impedance that offers easier impedance matching over wider bandwidths using lower loss components. The high thermal conductivity of Gallium Nitride helps to dissipate heat more effectively which results in amplifier designs that have significantly higher output power levels over broadband and narrowband frequencies. Common applications include commercial and military radars, jamming systems, medical imaging, communications and electronic warfare.
The new GaN RF amplifiers include models that feature very high gain levels from 43 to 60 dB across frequency bands ranging from 30 MHz to 7.5 GHz. Saturated output power levels range from 10 watts to 100 watts with up to 35% Power Added Efficiency (PAE). All of the high power GaN amplifiers from Fairview have single voltage supplies which are internally regulated. The 50 ohm input/output matched designs are adaptable to a range of power and modulation requirements. These GaN solid state power amplifiers also show impressive harmonic response (-15 to -20 dBc) under worst case conditions. They are designed to withstand environmental conditions such as humidity, altitude, shock and vibration. Some models are also equipped with integrated heat sinks and cooling fans. Most designs are EAR99.
Click here to see this new range of GaN Power Amplifiers from Fairview Microwave.
