RFMD's Ultra-High Efficiency Power Amplifiers Support Highly Anticipated LTE Version of Galaxy S3 Smartphone
RF Micro Devices has begun production shipments of its ultra-high efficiency power amplifiers to Samsung in support of the highly anticipated next-generation Galaxy S3 4G LTE smartphone. RFMD expects to supply the majority of the 3G and 4G power amplifiers in Samsung's highest volume smartphones this calendar year.
Eric Creviston, president of RFMD's Cellular Products Group, said, "These shipments of RFMD's ultra-high efficiency 3G/4G power amplifiers to Samsung underscore our strong design momentum in next-generation mobile devices and our early market share leadership in the rapidly growing LTE market. We currently forecast robust growth in LTE in calendar 2012, as LTE devices grow from approximately 20 million units in calendar 2011 to greater than 100 million units in calendar 2012."
RFMD's ultra-high efficiency 3G and 4G LTE PAs enable increased battery life in smartphones while reducing the thermal impact of advanced data-based applications, including web surfing, video calling and internet radio. The product family covers WCDMA bands 1, 2, 3, 4, 5, and 8, and LTE bands 3, 4, 7, 11, 13, 17, 20, and 21 — addressing the most common UMTS/HSPA+ and LTE frequency bands and band combinations.
