At IMS 2017, Wolfspeed introduced two new GaN MMICs, their first 50 V GaN devices specifically designed for S-band radar (2.7 to 3.5 GHz) applications. These new 50 V GaN MMICs enable radar system designers to reduce time to market with a less costly, less complex, 50 V power amplifier line-up, while delivering the most efficiency possible.
With a great combination of power, gain, and efficiency in low-cost plastic packaging, these new MMICs, available in 15 W and 30 W options, can operate as drivers for higher-voltage HEMT devices used in the output stage for S-band civil and military pulsed-radar amplifiers, or as output stage devices for S-band phased-array radar applications.
These 50V MMICs (15 W/50 V and 30 W/50 V) for S-band radar systems were demonstrated at the 2017 International Microwave Symposium (IMS) last week.
The new MMICs complement Wolfspeed’s previously released high performance CGHV35150 and CGH31500/CGH35400 output stage devices by operating as driver stages for these 150 W and 400 W devices, or as output stage devices for phased array radar applications covering full S-band applications at 2.7 to 3.5 GHz.
Designed for frequencies spanning 2.7 to 3.5 GHz, the 15 W/50 V CMPA2735015S GaN MMIC provides 34 dB small signal gain and 21 W output power at pulsed PSAT with a 500 μs pulse width and 10% duty cycle. The 30 W/50 V CMPA2735030S GaN MMICs are also designed for frequencies of 2.7 to 3.5 GHz, and provides 34 dB small signal gain and 41 W output power at pulsed PSAT with a 500 μs pulse width and 10% duty cycle.
Additionally, the 50 V GaN MMICs feature a two-stage, 50-ohm, reactively matched amplifier design to enable high power and additional power efficiency in a 5 mm x 5 mm surface mount QFN package. Because the part is fully matched to 50Ω, the matching circuitry moves from the PCB and onto the MMIC chip - making it easier for the customer to implement and reducing the overall size of the design. Both MMICs are available as bare dies.
With the industry’s most comprehensive portfolio of GaN RF devices for radar applications from L to X bands,Wolfspeed GaN-on-SiC RF devices are also enabling next-generation broadband, public safety, and ISM (industrial, scientific, and medical) amplifiers; broadcast, satellite, and tactical communications amplifiers; UAV data links; cellular infrastructure; test instrumentation; and two-way private radios.
