MACOM has introduced a new GaN-on-Si power transistor for pulsed L-Band radar systems targeted for airport surveillance radar (ASR) applications from 1.2 to 1.4 GHz. Delivering leading efficiency at peak pulse power levels up to 500 W, the MAGX-101214-500 claims to outperform premium-priced GaN-on-SiC-based transistors, and far exceed the performance, efficiency and power density of legacy LDMOS-based devices.
The new MAGX-101214-500 enables customers to scale to higher power levels across a host of ASR applications, delivering 500 W output power and greater than 70% power efficiency under pulsed conditions at 50 V operation. Supplied in a small-footprint ceramic flanged package and supporting matching structures that minimize circuit size, MAGX-101214-500 transistors help to enable rugged, compact radar systems underpinned with efficient, simplified cooling and power supply architectures.
The MAGX-101214-500 builds on the established success of MACOM’s comprehensive portfolio of GaN-on-Si power transistors, which have demonstrated field-proven reliability in harsh environmental conditions. To date, over one million MACOM GaN-on-Si devices have been shipped to customers around the world.
MACOM is showcasing the MAGX-101214-500 at European Microwave Week (EuMW), in Nuremberg, Germany. Products are currently sampling to customers, with production release targeted for the first half of 2018.
