Integra Technologies has introduced a fully-matched, GaN/SiC transistor that provides 50 W of peak pulsed output power while operating from 5 to 6 GHz. Designed for pulsed C-Band Radar applications, the IGT5259L50 high-power GaN-on-SiC HEMT transistor is fully-matched to 50 Ohms and supplies 50 W of output power at 50 V drain bias. This product offers 14 dB of gain, and 43% efficiency at 1 millisecond/15% pulse conditions.
The device is housed in a RoHS-compatible metal/ceramic flange-mount package with gold metallization. It provides excellent thermal dissipation, and measures 0.800” (20.32 mm) wide and 0.400” (10.16 mm) in length. It is 100% high-power RF tested in a 50 Ohms RF test fixture and meets all specifications of MIL-STD-750D. Internal assembly is done with a chip and wire approach by expert certified assemblers.
This 50W transistor is an ideal solution for C-band pulsed radar system designs that require immediate full power and high gain. To learn more about IGT5259L50, click here.
