Integra Technologies will be exhibiting at this year’s International Microwave Symposium, from 12-14 June, 2018 in Philadelphia.
Integra will be exhibiting the IGT5259L50, a fully-matched, GaN/SiC transistor, offering 50 Watts from 5 - 6 GHz, designed for pulsed C-band radar applications. They will also be exhibiting IGN1214L500B, a high-power GaN-on-SiC HEMT transistor, that supplies 500 Watts from 1.2 - 1.4 GHz with 15.5 dB gain and 65% efficiency from a 50V drain bias. This transistor is designed for L-band radar long-pulse applications.
Along with these products, Integra will be featuring upcoming products to be released in the future, at C and X-bands (going higher in frequency) and in terms of pallets (2000W, going higher in power).
At IMS 2018, industry leading companies will represent state-of-the-art materials, devices, components, subsystems, as well as design, simulation software and test/measurement equipment. This exhibition will draw more than 800 industry leaders, showcasing the latest developments in microwave devices and products, explaining the technology behind their devices and highlighting their applications. IMS 2018 will provide technical programs, networking opportunities and social events, allowing attendees to interact with exhibitors and members of the industry. To learn more about IMS 2018, click here.
