RF Micro Devices announced the expansion of the Company's entry solutions product portfolio to include multiple new solutions for 2G and 3G entry smartphones. The new RF solutions are designed to solve the increasingly complex RF requirements of entry-level 2G and 3G smartphones related to cost, band count, and thermal dissipation.
RFMD is uniquely positioned with a complete portfolio of GaAs- and silicon-based RF solutions for the entry smartphone segment. The Company's newest entry solutions include GaAs- and silicon-based power amplifiers and transmit modules for 2G and 3G entry smartphones, enabling RFMD to deliver complete RF reference designs, from the transceiver to the antenna.
RFMD intends to expand its entry solution product portfolio in calendar 2013 to include fully integrated silicon-based multimode power amplifiers and multimode transmit modules, bringing unprecedented levels of integration to the entry and mid-tier smartphone segments.
Industry analysts estimate quarterly shipments of entry smartphones will reach record levels, as new smartphone models proliferate across all tiers and as entry smartphone prices drop below $100. Leading manufacturers of entry smartphones are leveraging RFMD's entry solutions product portfolio to achieve the optimum balance of cost, performance and flexibility while satisfying critical requirements for quality and reliability in high-volume manufacturing.
RFMD is enabling the rapid growth in the entry smartphone segment by providing a complete suite of GaAs- and silicon-based 2G and 3G solutions optimized for the cost, size and performance requirements of entry devices. RFMD's entry solutions product portfolio is compatible with all leading baseband chipset providers, including Qualcomm, Intel, Broadcom, Mediatek, Spreadtrum and others.
