Richardson RFPD, Inc. will be exhibiting at the EDI CON 2013 at the Beijing International Convention Center, Beijing in China. EDI CON is an industry-driven conference/exhibition targeting RF, microwave, EMC/EMI, and high-speed digital design engineers and system integrators developing products for today's communication, computing, RFID, wireless, navigation, aerospace and related markets.
The conference is held from the 12-14 March 2013.
At the exhibition, Richardson RFPD will feature several of its industry-leading suppliers, including:
Analog Devices (ADI) — new high resolution ADCs: AD9250 & AD9645
Gore — 0G Cable, high throughput production test cables
M/A-COM Technology Solutions — GaN power transistors in COTS plastic packaging
Microsemi — GaN HEMT transistors for Avionics/Radar
Nitronex — 5W GaN on Si HEMT MMIC power amplifier, NPA1003QAT
Peregrine Semiconductor:
o PE64101 and PE64102 DuNE™ digitally tunable capacitors
o New SPDT RF switch offering +70 dBm IIP3 with +32 dBm power handling, PE42422
o New low insertion loss, high linearity SP3T RF switch, PE42430
o New High Linearity SP4T RF switch for T&M / ATE, PE42540
TriQuint Semiconductor — GaN power transistors, switches, and amplifiers, ideal for commercial radar and avionics
United Monolithic Semiconductors (UMS)— New GaN RF power products for pulsed or CW commercial radar and avionics
Richardson RFPD design advisors will also be at the booth, offering support and solutions for attendees' design visions and questions. Additionally, Richardson RFPD will host a special expert forum discussing the state-of-the-art in Gallium Nitride semiconductor technology targeting high-power RF and microwave applications. As the sponsor, Richardson RFPD has assembled a panel of experts from leading suppliers of discrete transistors and integrated circuits based on GaN technology.
The GaN panel discussion will take place on Wednesday, March 13, from 3:30-5:00pm, in Room A of the convention center. Additional information about the GaN Panel and Richardson RFPD's activities at the conference may be found here.
