New High Power Baluns & Bias Tees for Test and Measurement of GaN Amplifiers

Marki Microwave has launched a new line of High Power Baluns and Bias Tees to support the increase in demand for testing GaN and other high power semiconductors. The new high power surface mount baluns (BALH-0003SMG and BALH-0006SMG) have a 37 dBm 1-dB compression point and improved 5 dB insertion loss (2 dB excess). The connectorized high power baluns (BALH-0003 and BAL-0006) have a similar insertion loss and show no compression up to 37 dBm input power.

The new line of connectorized high power bias tees come with 50 V DC blocking capacitors standard. They are available with either 1 amp (BT1, BTN1) or 2 amps (BT2, BTN2)of DC current carrying capability. The RF power rating of these components is limited by the connector selection.

You can search for Baluns and Bias Tees from multiple manufacturers on everything RF.

Publisher: everything RF