Cree has released two new gallium nitride (GaN) high electron mobility transistors (HEMTs) ideal for use in 1.2–1.4 GHz L-Band radar amplifier systems: the 250W CGHV14250 and the 500W CGHV14500. These GaN Transistors have a high L-Band efficiency performance at 85°C, high power gain performance, and wide bandwidth capabilities. The new transistors are designed to enhance the performance of band-specific applications ranging from UHF to 1800MHz, including: tactical air navigation systems (TACAN), identification: friend or foe (IFF) systems, and other military telemetry systems.
Based on Cree’s 50V 0.4µ GaN on SiC foundry process, Cree’s new GaN HEMTs for L-Band radar systems provide engineers with excellent power and small signal performance, are internally pre-matched on the input, and are available in ceramic/metal flange and pill packages that are much smaller than competing gallium arsenide (GaA) or silicon (Si) RF technology, enabling enhanced design flexibility.
The 250W CGHV14250 features 330W typical output power, 18dB power gain, and 77% typical drain efficiency. The 500W CGHV14500 features 500W typical output power, 17dB power gain, and 70% typical drain efficiency. Both the 250W and 500W GaN HEMTs feature 0.3dB pulsed amplitude droop.
