Peregrine Semiconductor, the founder of RF SOI (silicon on insulator) and pioneer of advanced RF solutions, has announced the UltraCMOS 10 platform, the newest advancement in its UltraCMOS technology. UltraCMOS 10 RF SOI delivers both flexibility and unparalleled performance for addressing the ever-increasing challenges of RF front-end design. It offers the performance of UltraCMOS technology with the economies of SOI, and it delivers a more than 50-percent performance improvement over comparable solutions.
Peregrine’s versatile, new 130 nm UltraCMOS 10 technology delivers the support needed for the latest generation of LTE-Advanced smartphones and, for the first time, will allow the company to deliver cost-competitive products for 3G smartphones. Peregrine is enhancing a long-term relationship and leveraging a new one for the UltraCMOS 10 introduction – Soitec’s breakthrough semiconductor materials coupled with tier-one fab GLOBALFOUNDARIES’ custom fabrication flow.
Peregrine is enhancing a long-term relationship and leveraging a new one for the UltraCMOS 10 introduction – Soitec’s breakthrough semiconductor materials coupled with tier-one fab GLOBAL FOUNDARIES’ custom fabrication flow.
