WIN Semiconductors has announced the development of new sample kits for its gallium nitride (GaN) based 0.15μm-gate technology. The new NP15-00 mm-Wave compound semiconductor technology is ideal for transmit power amplifiers used in 5G mmWave radio access networks, satellite communications and radar systems.
Supporting full MMICs, the NP15-00 platform allows customers to develop compact, linear or saturated high power amplifiers up to 35 GHz. In the 29 GHz band, the NP15-00 technology offers saturated output power of 3 watts/mm with 13 dB linear gain and greater than 50% efficiency without harmonic tuning.
For mmWave active arrays, the higher transmit power and efficiency from the NP15-00 platform affords designers greater flexibility to optimize antenna count, power amplifier size and total array power. Depending on the application, mmWave radio access network (RAN) infrastructure will leverage access points of various sizes, shapes and power levels, and a broad trade-space is crucial to optimize the performance and economics of mmWave active antenna systems.
The NP15-00 GaN technology employs a source-coupled field plate for improved breakdown voltage, and operates at a drain bias of 20 volts. This technology is fabricated on 100mm silicon carbide substrates with through-wafer vias for low inductance grounding.
