News for Mitsubishi Electric US, Inc. | Page 3
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Mitsubishi Electric USand NextGen RF Designhave collaborated again to help accelerate the design of UHF band power amplifiers, with the introduction of the RD01 evaluation kit... Read More
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Mitsubishi Electric Corporation announced that they have developed a 220W-output power Gallium Nitride High Electron Mobility Transistor (GaN-HEMT) offering world-leading effi... Read More
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Mitsubishi Electric US and NextGen RF Design have joined forces to offer RF design engineers a 7 Watt UHF band amplifier evaluation kit and associated reference design package... Read More
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Mitsubishi Electric has announced that it has developed an innovative antenna system, called SeaAerial, that shoots a column of seawater into the air to create a conductive pl... Read More
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Mitsubishi Electric introduced a line of Gallium Nitride High Electron Mobility Transistors (GaN-HEMTs) for use in Base Transceiver Stations (BTS) operating in the 3.5 GHz ban... Read More
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Mitsubishi Electric has developed a prototype Active Phased Array Antenna (APAA) to verify new multi-beamforming technology for envisioned fifth-generation (5G) mobile network... Read More
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The Semiconductor Division of Mitsubishi Electric US, Inc. has announced the availability of a new version of its RD07MUS2B 7W RF transistor that exceeds the current RoHS2 req... Read More
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