Mitsubishi Electric introduced a line of Gallium Nitride High Electron Mobility Transistors (GaN-HEMTs) for use in Base Transceiver Stations (BTS) operating in the 3.5 GHz band for 4G mobile communication systems. The four new GaN-HEMTs offer output power and efficiency levels that are among the highest currently available in the market.
As a result of the deployment of LTE and LTE-Advanced mobile networks is rising, there is a rising need for Base Stations that can provide increased data volume, smaller size and lower power consumption. These new GaN HEMTs have been developed for use in macro BTS and large numbers of micro cells that mobile network operators are employing to increase the data capacity of their advanced 4G networks built with LTE and LTE-Advanced technologies.
Samples will be released starting February 1. Post which Mitsubishi plans to expand its GaN-HEMT lineup for use in different output power and frequencies, and in mobile communication systems beyond 4G.
Product Features
Expanded product line-up
- Flangeless ceramic package in 180W and 90W models for macro-cell BTS
- Plastic molded package in 7W and 5W models for micro-cell BTS
GaN-HEMT and transistor optimization for high efficiency
- High efficiency helps to reduce the size and power consumption of BTS
- 90W model for macro-cell BTS achieves high drain efficiency (load pull) of 74 percent
- 7W and 5W models for micro-cell BTS achieve high drain efficiency of 67 percent
- High efficiency allows use of simple cooling system, which contributes to smaller size and lower power consumption of BTS
Size Reduction
- Flangeless ceramic package reduces the size of the devices themselves and power amplifier modules in which they are deployed
