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ASL4055C7 GaN

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The ASL4055C7 GaN from Aelius Semiconductors is a RF Amplifier with Frequency 8.5 to 12.5 GHz, Gain 23 to 28 dB, Power Gain 23 dB, Small Signal Gain 28 dB, Saturated Power 43 dBm. Tags: Surface Mount, Power Amplifier. More details for ASL4055C7 GaN can be seen below.

Product Specifications

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Product Details

  • Part Number
    ASL4055C7 GaN
  • Manufacturer
    Aelius Semiconductors
  • Description
    Power Amplifier from 8.5 to 12.5 GHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    IC/MMIC/SMT
  • Application
    EMC, Communication, Instrumentation
  • Industry Application
    Electronic Warfare, Test & Measurement
  • Frequency
    8.5 to 12.5 GHz
  • Gain
    23 to 28 dB
  • Power Gain
    23 dB
  • Small Signal Gain
    28 dB
  • Saturated Power
    43 dBm
  • Saturated Power
    19.9 W
  • Input Power
    33 dBm
  • Input Power
    1.99 W
  • PAE
    35%
  • Impedance
    50 Ohms
  • Pulsed/CW
    Pulsed
  • Duty Cycle
    10%
  • Sub-Category
    GaN Amplifier, Pulsed Amplifier
  • Return Loss
    10 dB
  • Input Return Loss
    10 dB
  • Output Return Loss
    10 dB
  • Supply Voltage
    28 V (Drain)
  • Current Consumption
    220 mA (Saturated)
  • Quiscent Current
    170 mA
  • Technology
    AlGaN/GaN HEMT
  • Package Type
    Surface Mount
  • Dimensions
    7 x 7 x 1.5 mm
  • Operating Temperature
    -40 to 80 Degree C
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents
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