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ASL4062C GaN

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The ASL4062C GaN from Aelius Semiconductors is a RF Amplifier with Frequency 2.8 to 3.4 GHz, Gain 18 to 25 dB, Power Gain 18 dB, Small Signal Gain 25 dB, Saturated Power 47 dBm. Tags: Surface Mount, Power Amplifier. More details for ASL4062C GaN can be seen below.

Product Specifications

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Product Details

  • Part Number
    ASL4062C GaN
  • Manufacturer
    Aelius Semiconductors
  • Description
    Power Amplifier from 2.8 to 3.4 GHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    IC/MMIC/SMT
  • Application
    Weather Radar System, Air Traffic Control
  • Industry Application
    Aerospace & Defense
  • Frequency
    2.8 to 3.4 GHz
  • Gain
    18 to 25 dB
  • Power Gain
    18 dB
  • Small Signal Gain
    25 dB
  • Grade
    Space, Military
  • Saturated Power
    47 dBm
  • Saturated Power
    50.11 W
  • Input Power
    32 dBm
  • Input Power
    1.58 W
  • PAE
    40%
  • Impedance
    50 Ohms
  • Pulsed/CW
    CW
  • Pulse Width
    100 uSec
  • Duty Cycle
    10%
  • Sub-Category
    GaN Amplifier, Pulsed Amplifier
  • Return Loss
    7 to 10 dB
  • Input Return Loss
    10 dB
  • Output Return Loss
    7 dB
  • Supply Voltage
    35 V (Drain)
  • Current Consumption
    430 mA (Saturated)
  • Quiscent Current
    170 mA
  • Technology
    AlGaN/GaN HEMT
  • Package Type
    Surface Mount
  • Dimensions
    11.71 x 9.76 mm
  • Operating Temperature
    -50 to 85 Degree C
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents
View details on the manufacturer's website
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