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ASL4065 GaN

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The ASL4065 GaN from Aelius Semiconductors is a RF Amplifier with Frequency 14 to 18 GHz, Gain 18 to 25 dB, Power Gain 18 dB, Small Signal Gain 25 dB, Saturated Power 44 dBm. Tags: Power Amplifier. More details for ASL4065 GaN can be seen below.

Product Specifications

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Product Details

  • Part Number
    ASL4065 GaN
  • Manufacturer
    Aelius Semiconductors
  • Description
    Power Amplifier from 14 to 18 GHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    Die
  • Application
    EMC, Communication, Instrumentation
  • Industry Application
    Electronic Warfare
  • Frequency
    14 to 18 GHz
  • Gain
    18 to 25 dB
  • Power Gain
    18 dB
  • Small Signal Gain
    25 dB
  • Saturated Power
    44 dBm
  • Saturated Power
    25.11 W
  • Input Power
    33 dBm
  • Input Power
    1.99 W
  • PAE
    25%
  • Impedance
    50 Ohms
  • Pulsed/CW
    Pulsed
  • Duty Cycle
    10%
  • Sub-Category
    GaN Amplifier, Pulsed Amplifier
  • Return Loss
    6 to 10 dB
  • Input Return Loss
    6 dB
  • Output Return Loss
    10 dB
  • Supply Voltage
    28 V (Drain)
  • Current Consumption
    350 mA (Saturated)
  • Quiscent Current
    280 mA
  • Technology
    AlGaN/GaN HEMT
  • Dimensions
    4.65 x 4.6 x 0.1 mm
  • Operating Temperature
    -50 to 85 Degree C
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents
View details on the manufacturer's website
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