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AGMPA165215B

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The AGMPA165215B from AmpliTech is a GaN HEMT Power Amplifier MMIC that operates from 17.3 to 20.2 GHz. It provides 20 dB of gain with a saturated output power of 35 dBm (~3.16 W) and has a PAE of 26 %. This GaN HEMT power amplifier requires a DC supply of +28 V and consumes 100 mA of current. It is available as a 50-ohm internally matched die that measures 2.4 x 1.8 x 0.1 mm and is ideal for point-to-point radio and K-Band SATCOM applications.

Product Specifications

Product Details

  • Part Number
    AGMPA165215B
  • Manufacturer
    AmpliTech, Inc.
  • Description
    2 W, GaN Power Amplifier MMIC from 17.3 to 20.2 GHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    Die
  • Application
    Satellite, Point-to-Point
  • Standards Supported
    K Band
  • Industry Application
    Broadcast, SATCOM
  • Frequency
    17 to 20 GHz
  • Gain
    20 to 21 dB
  • Gain Flatness
    ±1 dB
  • Grade
    Commercial, Space
  • Saturated Power
    35 dBm
  • Saturated Power
    3.16 W
  • Input Power
    36 dBm
  • Input Power
    3.98 W
  • Power Dissipation
    2.8 W
  • PAE
    26 %
  • Impedance
    50 Ohms
  • Pulsed/CW
    CW
  • Sub-Category
    GaN Amplifier
  • Return Loss
    21 to 26 dB
  • Input Return Loss
    26 dB
  • Output Return Loss
    21 dB
  • Supply Voltage
    28 V
  • Current Consumption
    100 mA
  • Transistor Technology
    GaN on SiC, HEMT
  • Package Type
    Chip
  • Dimensions
    2.4 x 2.2 x 0.1 mm
  • Operating Temperature
    -55 to 85 Degree C
  • Storage Temperature
    -65 to 150 Degree C