ADL8142S

RF Amplifier by Analog Devices (476 more products)

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The ADL8142S from Analog Devices is a pHEMT Low Noise Amplifier MMIC that operates from 23 to 31 GHz. It delivers a gain of 29 dB with a noise figure of less than 1.8 dB and has a saturated output power of 10 dBm. This LNA has a power-added efficiency of up to 21% and requires a DC supply of 2 V while drawing 25 mA of current. It has been developed for commercial space applications and has wafer diffusion lot traceability, radiation lot acceptance tests (RLAT), total ionizing dose (TID), and radiation benchmarking with single event latch-up (SEL). This LNA is available in an LFCSP package that measures 2 x 2 mm and is ideal for geosynchronous high throughput satellite (GEO HTS), low earth orbit (LEO) space payloads, and satellite communication applications.

Product Specifications

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Product Details

  • Part Number
    ADL8142S
  • Manufacturer
    Analog Devices
  • Description
    Low Noise Amplifier MMIC from 23 to 31 GHz for Space Applications

General Parameters

  • Type
    Low Noise Amplifier
  • Configuration
    IC/MMIC/SMT
  • Display Application
    Geosynchronous high throughput satellite (GEO HTS), Low Earth orbit (LEO) space payloads
  • Industry Application
    SATCOM
  • Frequency
    23 to 31 GHz
  • Gain
    24.5 to 29 dB
  • Noise Figure
    1.6 to 1.8 dB
  • Output Power
    10 to 11 dBm
  • Output Power
    0.01 to 0.013 W
  • P1dB
    7.5 to 10 dBm
  • P1dB
    0.006 to 0.01 W
  • IP2
    25 to 35 dBm
  • Grade
    Space
  • IP2
    0.316 to 3.162 W
  • IP3
    17.5 to 21.5 dBm
  • IP3
    0.056 to 0.141 W
  • Saturated Power
    10 to 11 dBm
  • Saturated Power
    0.01 to 0.013 W
  • Input Power
    20 dBm (Max)
  • Input Power
    0.1 W
  • Power Dissipation
    0.54 W
  • PAE
    18 to 21 %
  • Impedance
    50 Ohms
  • Pulsed/CW
    Pulsed
  • Return Loss
    10.5 to 16 dB
  • Input Return Loss
    10.5 to 13 dB
  • Output Return Loss
    15 to 16 dB
  • Supply Voltage
    1.5 to 3.5 V
  • Current Consumption
    2 to 25 mA
  • Quiscent Current
    25 mA
  • Transistor Technology
    GaAs pHEMT
  • Package Type
    Chip
  • Package
    8-Lead LFCSP package
  • Dimensions
    2 × 2 × 0.85 mm
  • Operating Temperature
    -40 to 85 Degree C
  • Storage Temperature
    -65 to 150 Degree C
  • RoHS
    Yes

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