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The PTXM1000 from Communications & Power Industries is a Microwave Power Module (MPM) that operates from 13.75 to 14.5 GHz. It delivers a CW saturated output power of more than 110 W with a small signal gain of 53 dB. This module incorporates a low gain dual collector TWT with a low noise linearizer to provide optimum noise performance and maximum undistorted power capability. It integrates a “Super Mini” Travelling Wave Tube (TWT), linearizer, and an optimized high-density switch mode power supply to produce a single “drop-in” microwave amplifier block for any CW application requiring the highest power, and linear performance. Integration of the TWT and its high voltage power supply simplifies the system designer’s task by eliminating the TWT interconnect (and their associated safety and reliability hazards).

The PTXM1000 can be configured to incorporate a variety of TWT models, allowing the user to specify frequency and peak power parameters. It includes a control interface which allows remote operation and status monitoring, providing diagnostic outputs for BIT purposes. This MPM can operate at high altitudes and high humidity and will survive high levels of vibration and shock for operation in the harshest military environments. It is available in an enclosure that measures 190 x 120 x 30 mm with SMA-female and TNC-female connectors. The module is suitable for use in Ku band communications systems and high-performance radar and ECM systems.

This microwave power module requires a DC supply of 270 V and consumes 455 W of power (AC supply options are also available).

Product Specifications

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Product Details

  • Part Number
    PTXM1000
  • Manufacturer
    Communications & Power Industries
  • Description
    Travelling Wave Tube Amplifier from 13.75 to 14.5 GHz

General Parameters

  • Type
    Travelling Wave Tube Amplifier
  • Configuration
    Module with Connector
  • Application
    Radar, Electronic Countermeasure (ECM)
  • Standards Supported
    Ku Band
  • Industry Application
    Radar
  • Frequency
    13.75 to 14.5 GHz
  • Gain
    53 dB
  • Small Signal Gain
    53 dB
  • Gain Flatness
    +/- 3 dB
  • Noise Figure
    10 dB
  • Output Power
    32.22 dBm
  • Output Power
    1.67 W
  • Gain Stability
    +/-2.0 dB
  • IM3
    -25 dBc
  • Saturated Power
    50.4 dBm
  • Saturated Power
    109.64 W
  • Peak Power
    110 W
  • Input Power
    0 dBm
  • Input Power
    0.001 W
  • Power Consumption
    455 W
  • Pulsed/CW
    CW
  • Duty Cycle
    100 %
  • VSWR
    1.50:1, 2.00:1
  • Input VSWR
    1.50:1
  • Output VSWR
    2.00:1
  • Sub-Category
    GaN Amplifier
  • Harmonics
    -15 dBc
  • Spurious
    -60 dBc
  • Phase Noise
    -100 to -40 dBc/Hz
  • Supply Voltage
    270 Vdc
  • Transistor Technology
    GaN
  • Technology
    MMIC
  • Package Type
    Drop-In
  • Connectors
    SMA, SMA - Female, TNC, TNC - Female
  • Input Connector
    SMA, SMA - Female
  • Output Connector
    TNC, TNC - Female
  • Weight
    1.7 Kg
  • Cooling Options
    Conduction via baseplate
  • Operating Temperature
    -50 to 85 Degree C
  • Storage Temperature
    -55 to 100 Degree C
  • Certifications
    MIL-STD-810G, MIL-STD-461E

Technical Documents