CMPA0060002F1-AMP

RF Amplifier by MACOM (663 more products)

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The CMPA0060002F1-AMP from MACOM is a GaN MMIC Power Amplifier that operates from DC to 6 GHz. It delivers a saturated output power of 5.9 W with a small signal gain of more than 16.8 dB and power-added efficiency (PAE) of up to 39%. This MMIC amplifier is based on MACOM’s CMPA0060002F1 GaN HEMT and uses GaN-on-SiC technology. It employs a distributed amplifier design approach, enabling extremely wide bandwidths to be achieved in a small-footprint screw-down package with a copper-tungsten heat sink. The amplifier requires a DC supply of 28 V.

The CMPA0060002F1-AMP is available in a surface-mount package with flanges that measure 0.5 x 0.5 inches and is ideal for use in ultra-broadband amplifiers, fiber drivers, EMC amplifier drivers, and test instrumentation applications.

Product Specifications

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Product Details

  • Part Number
    CMPA0060002F1-AMP
  • Manufacturer
    MACOM
  • Description
    5 W GaN Power Amplifier MMIC from DC to 6 GHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    Module with Connector
  • Application
    broadband
  • Industry Application
    Test & Measurement, Test & Measurement
  • Frequency
    DC to 6000 MHz
  • Gain
    18 dB
  • Power Gain
    7.8 to 12.5 dB
  • Small Signal Gain
    16.8 to 21.4 dB
  • Output Power
    36.81 dBm
  • Output Power
    4.8 W
  • Grade
    Commercial
  • Saturated Power
    36.81 dbM
  • Saturated Power
    4.8 W
  • PAE
    18 to 39 %
  • Impedance
    50 Ohms
  • Output VSWR
    5.0:1
  • Sub-Category
    GaN Amplifier
  • Input Return Loss
    -8.3 dB
  • Output Return Loss
    -10.4 dB
  • Supply Voltage
    28 V
  • Transistor Technology
    GaN HEMT
  • Technology
    GaN on SiC
  • Cooling Options
    Heat sink
  • Operating Temperature
    -40 to 150 Degree C
  • Storage Temperature
    -65 to 150 Degree C
  • RoHS
    Yes

Technical Documents