CMPA801B030D1

RF Amplifier by MACOM (663 more products)

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The CMPA801B030D1 from MACOM is a GaN MMIC Power Amplifier that operates from 8 to 11 GHz. It delivers a saturated output power of 40 W with a large signal gain of 20 dB and has a PAE of 40% in pulsed operation mode. The amplifier is designed using a 0.15um GaN on SiC process and provides improved RF performance. It requires a DC supply of 28 V and draws 800 mA of current. This amplifier is available as a die and is ideal for use in civil and military radar applications.

Product Specifications

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Product Details

  • Part Number
    CMPA801B030D1
  • Manufacturer
    MACOM
  • Description
    40 W GaN MMIC Power Amplifier from 8 to 11 GHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    IC/MMIC/SMT
  • Industry Application
    Military, Radar
  • Frequency
    8 to 11 GHz
  • Power Gain
    19.5 to 20.5 dB
  • Small Signal Gain
    25 to 28.5 dB
  • Output Power
    45.5 to 46.5 dBm
  • Output Power
    35.48 to 44.67 W
  • Grade
    Commercial, Military
  • Saturated Power
    45.5 to 46.5 dBm
  • Saturated Power
    35.48 to 44.66 W
  • PAE
    36 to 40 %
  • Pulsed/CW
    CW/Pulsed
  • Sub-Category
    GaN Amplifier
  • Input Return Loss
    10 dB
  • Output Return Loss
    6 dB
  • Supply Voltage
    28 V
  • Transistor Technology
    GaN on SiC
  • Package Type
    Surface Mount
  • Operating Temperature
    -40 to 85 Degree C
  • Storage Temperature
    -55 to 150 Degree C
  • RoHS
    Yes

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