GTH2r-2731150S

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The GTH2r-2731150S from Gallium Semi is a Power Amplifier that operates from 2.7 to 3.1 GHz. It delivers a pulsed output power of 150 W with a drain efficiency of more than 62%. This amplifier is based on GaN-SiC HEMT technology and is ideal for high-power amplification in S-band radar systems and SATCOM applications. It is available in a surface-mount 6-pin DFN package that measures 6.5 x 7.0 mm and requires a DC supply of 50 V. The compact form factor of this HEMT allows it to be used in space-constrained designs without compromising performance or reliability.

Product Specifications

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Product Details

  • Part Number
    GTH2r-2731150S
  • Manufacturer
    Gallium Semiconductor
  • Description
    150 W GaN Amplifier from 2.7 to 3.1 GHz for Radar Applications

General Parameters

  • Type
    Power Amplifier
  • Configuration
    IC/MMIC/SMT
  • Standards Supported
    S Band
  • Frequency
    2.1 to 2.7 GHz
  • Output Power
    150 W
  • Class
    AB
  • Pulsed/CW
    Pulsed
  • Sub-Category
    GaN Amplifier
  • Supply Voltage
    50 V
  • Transistor Technology
    HEMT GaN on SiC
  • Package Type
    Surface Mount
  • Package
    6-Pin QFN
  • Dimensions
    6.5 X 7 mm

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