GRF5519

RF Amplifier by Guerrilla RF (114 more products)

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GRF5519 Image

The GRF5519 from Guerrilla RF is a two-stage InGaP HBT Power Amplifier that operates from 1.92 to 2.2 GHz. It delivers a linear output power of up to 23 dBm with a gain of 26.5 dB and an adjacent channel leakage ratio (ACLR) of -45 dBc without Digital Pre-distortion (DPD). The 50-ohm amplifier offers flexible biasing that can further optimize its power characteristics, and also has a digital shutdown option. It requires a supply of 5 V and consumes a current of 205 mA.
The GRF5519 has a rugged design and is extremely resilient to mismatched loads. It is available in a QFN-16 package that measures 3 x 3 mm and is ideal for use in cellular boosters, automotive compensators, picocells/femtocells, and Customer Premise Equipment.
The native linearity of this amplifier makes it suitable for transmitter applications that do not employ Digital Predistortion Correction schemes. The ability to beat the -45dBc ACLR performance metric without DPD is critical for cellular applications like home and commercial repeaters/boosters, femtocells, picocells and cable loss compensators associated with automotive ‘shark fin’ antennas. In each of these use cases, the sensitivity to cost, power and size constraints prohibits the use of elaborate linearization techniques like DPD.
Instead, designers must rely on the power amplifier’s native linearity to meet the stringent emissions mask requirements imposed by the latest 5G and 4G standards.

Product Specifications

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Product Details

  • Part Number
    GRF5519
  • Manufacturer
    Guerrilla RF
  • Description
    High Linearity Power Amplifiers without Digital Pre-distortion from 1.92 to 2.2 GHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    IC/MMIC/SMT
  • Application
    Automotive, Picocells/Femtocells, Picocells/Femtocells, WiFi
  • Standards Supported
    WiFi
  • Industry Application
    Cellular, Military, Wireless Infrastructure
  • Frequency
    1.92 to 2.2 GHz
  • Small Signal Gain
    26.5 dB
  • Noise Figure
    4.1 dB
  • Output Power
    32 dBm
  • Output Power
    1.58 W
  • P1dB
    32 dBm
  • P1dB
    1.58 W
  • IP3
    45 dBm
  • Pulsed/CW
    CW
  • Rise Time
    500 ns
  • Fall Time
    500 ns
  • Supply Voltage
    5 V
  • Current Consumption
    205 mA
  • Transistor Technology
    InGaP HBT
  • Package Type
    Surface Mount
  • Package
    QFN-16
  • Dimensions
    3.0 x 3.0 x 0.85 mm
  • Operating Temperature
    -40 to 85 Degree C
  • Storage Temperature
    -65 to 150 Degree C

Technical Documents