GMICP2731-10

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The GMICP2731-10 from Microchip Technology is a Ka-Band MMIC Power Amplifier that operates from 27.5 to 31.0 GHz. It delivers a saturated output power of 39 dBm with a small signal gain of 22 dB and has a power added efficiency of 22%. The amplifier is fabricated using 0.15 μm GaN SiC technology. The balanced topology provides an excellent broadband input & output match to 50-ohms, and DC blocking capacitors ensure simple integration.

The GMICP2731-10 requires a drain bias voltage of 24 V and draws less than 224 mA of current. It can be used in commercial and defense satellite communication systems, 5G networks, and other aerospace and defense systems. The amplifier supports complex modulation schemes to achieve the ultra-fast data rates required to deliver video and broadband data.

Product Specifications

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Product Details

  • Part Number
    GMICP2731-10
  • Manufacturer
    Microchip Technology
  • Description
    Ka-Band GaN MMIC Amplifier from 27.5 to 31 GHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    IC/MMIC/SMT
  • Industry Application
    SATCOM
  • Frequency
    27.5 to 31 GHz
  • Small Signal Gain
    22 dB
  • Output Power
    39 dBm
  • Output Power
    7.94 W
  • Grade
    Commercial
  • Saturated Power
    39 dBm
  • Saturated Power
    7.94 W
  • Input Power
    24 dBm
  • Input Power
    0.25 W
  • PAE
    22 %
  • Impedance
    50 Ohms
  • Sub-Category
    GaN Amplifier
  • Return Loss
    15 dB
  • Supply Voltage
    24 V
  • Current Consumption
    112 to 224 mA
  • Transistor Technology
    GaN on SiC
  • Package Type
    Surface Mount

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