The RA50H7687M1 from Mitsubishi Electric is a MOSFET Amplifier Module that operates from 763 to 870 MHz. It delivers an output power of 50 W with an efficiency of more than 40% and has a leakage current of less than 1 mA. This module is designed for non-linear FM modulation but can also be used for linear modulation by setting the drain quiescent current with the gate voltages and controlling the output power with the input power. It requires a DC supply of 12.5 V, and the battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. This amplifier module is available in a package that measures 67.0 x 19.4 x 9.9 mm and is suitable for use in mobile radios.
