MLA-01122B

Note : Your request will be directed to MicroWave Technology.

MLA-01122B Image

The MLA-01122B from MicroWave Technology is a fully matched Low-Noise MMIC Amplifier that operates from 1 to 12 GHz. It provides a gain of 17 dB with a noise figure of less than 1.8 dB and has a P1dB of 16.5 dBm. The LNA utilizes GaAs pHEMT technology and has an on-chip bias circuit, choke and DC blocking for providing bias stability. It requires a DC supply voltage of 5 V and draws 55 mA of current. The amplifier is available as a die that measures 1.57 x 1.31 x 0.10 mm and is ideal for microwave radios, satellite communication, instrumentation, wideband systems and in many other commercial wireless applications where low-noise figure with high gain is desirable.

 

Product Specifications

View similar products

Product Details

  • Part Number
    MLA-01122B
  • Manufacturer
    MicroWave Technology
  • Description
    Low Noise Amplifier from 1 to 12 GHz

General Parameters

  • Type
    Low Noise Amplifier
  • Configuration
    Die
  • Application
    Point-to-Point, Satellite, Electronic Warfare
  • Industry Application
    Wireless Infrastructure, Test & Measurement, SATCOM, Broadcast, Commercial
  • Frequency
    1 to 12 GHz
  • Gain
    17 to 19 dB
  • Gain Flatness
    0.6 to 1.5 dB
  • Noise Figure
    1.2 to 1.8 dB
  • Output Power
    14 to 17 dBm
  • Output Power
    0.03 to 0.05 W
  • P1dB
    14 to 17 dBm
  • P1dB
    0.6 to 0.050 W
  • Grade
    Space Qualified
  • IP3
    25 to 30 dBm
  • IP3
    0.32 to 0.32 W
  • Input Power
    13 dBm
  • Input Power
    0.6 to 0.0199 W
  • Power Dissipation
    0.4 W
  • Impedance
    50 Ohms
  • Input Return Loss
    9.5 to 15 dB
  • Output Return Loss
    12 dB
  • Supply Voltage
    5 V
  • Transistor Technology
    PHEMT
  • Technology
    MMIC, GaAs
  • Dimensions
    1.57 x 1.31 x 0.1 mm
  • Operating Temperature
    -40 to 85 Degree C
  • Storage Temperature
    -60 to 150 Degree C

Technical Documents