APH667

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The APH667 from Northrop Grumman is a GaAs MMIC Power Amplifier that operates from 81 to 86 GHz. It delivers a saturated output power of 25.5 dBm with a linear gain of 14 dB. The amplifier requires a DC supply of 4 V and consumes 630 mA of current.

The APH667 is available as a die that measures 3790 x 2920 µm with Ti/Au bond pads and backside metallization. It is fully passivated and can operate in rugged environments while providing reliable performance. The amplifier is compatible with conventional die attach, thermocompression, and thermosonic wire bonding assembly techniques. It is ideal for FCC E-band communications (81-86 GHz band), short haul / high capacity links, enterprise wireless LAN, and wireless fiber replacement applications.

Product Specifications

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Product Details

  • Part Number
    APH667
  • Manufacturer
    Northrop Grumman
  • Description
    GaAs MMIC Power Amplifier Die from 81 to 86 GHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    Die
  • Application
    Radio
  • Standards Supported
    E Band, WLAN
  • Frequency
    81 to 86 GHz
  • Gain
    13.5 to 14 dB
  • Output Power
    25.5 dBm
  • Output Power
    0.35 W
  • Grade
    Commercial
  • Saturated Power
    25.5 dBm
  • Saturated Power
    0.3548 W
  • Input Return Loss
    16 to 20 dB
  • Output Return Loss
    14 to 19 dB
  • Supply Voltage
    4 V
  • Current Consumption
    270 to 360 mA
  • Transistor Technology
    HEMT
  • Technology
    GaAs
  • Dimensions
    11.07 sq. mm

Technical Documents