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APN149

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The APN149 from Northrop Grumman is a RF Amplifier with Frequency 18 to 23 GHz, Gain 19 to 23 dB, Output Power 36 to 38.5 dBm, Output Power 3.98 to 7.08 W, P1dB 36 dBm. Tags: Power Amplifier. More details for APN149 can be seen below.

Product Specifications

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Product Details

  • Part Number
    APN149
  • Manufacturer
    Northrop Grumman
  • Description
    GaN HEMT Power Amplifier

General Parameters

  • Type
    Power Amplifier
  • Configuration
    Die
  • Application
    Radio, Point-to-Point, Point-to-Multipoint
  • Industry Application
    Radar, Aerospace & Defense, SATCOM, Broadcast, Wireless Infrastructure
  • Frequency
    18 to 23 GHz
  • Gain
    19 to 23 dB
  • Output Power
    36 to 38.5 dBm
  • Output Power
    3.98 to 7.08 W
  • P1dB
    36 dBm
  • P1dB
    3.981 W
  • Saturated Power
    37.5 to 38.5 dBm
  • Saturated Power
    5.62 to 7.07 W
  • Sub-Category
    GaN Amplifier
  • Input Return Loss
    4 to 11 dB
  • Output Return Loss
    6 to 11 dB
  • Supply Voltage
    28 V
  • Current Consumption
    144 to 400 mA
  • Transistor Technology
    HEMT
  • Technology
    GaN

Technical Documents
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