NW-PA-C-10-R01

Note : Your request will be directed to NuWaves RF Solutions.

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The NuPower C10R01 from NuWaves Engineering is a GaN SSPA that operates from 5100 to 5900 MHz. It delivers a saturated output power of 10 W with a small signal gain of 54 dB and has a VSWR of 2:1. This GaN-based power amplifier provides near-constant envelope waveforms and has an 'improved' link margin. It requires a DC voltage of 27-32 V and consumes 1.6 A of current. The amplifier is available in a module that measures 3.57 x 2.57 x 0.50 inches with SMA-Female connectors and features over-voltage protection. It is ideal for use in SWaP-constrained broadband RF telemetry, tactical communication systems, and electronic warfare systems.

The amplifier is listed under the US EAR99 Export Category.

Product Specifications

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Product Details

  • Part Number
    NW-PA-C-10-R01
  • Manufacturer
    NuWaves RF Solutions
  • Description
    10 W GaN Solid-State Power Amplifier from 5.1 to 5.9 GHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    Module with Connector
  • Application
    Telemetry, Unmanned Aircraft Systems(UAS), Communication
  • Industry Application
    Aerospace & Defense
  • Frequency
    5.1 to 5.9 GHz
  • Gain
    48 to 54 dB
  • Gain Flatness
    6 dB
  • Output Power
    29 to 40 dBm
  • Output Power
    0.79 to 10 W
  • P1dB
    29 to 33 dBm
  • P1dB
    1.8 to 2 W
  • Saturated Power
    40 dBm
  • Saturated Power
    10 W
  • Input Power
    12 dBm
  • Input Power
    0.015 W
  • Impedance
    50 Ohms
  • Pulsed/CW
    CW
  • Input VSWR
    2.00:1
  • Sub-Category
    SSPA
  • Supply Voltage
    27 to 32 V
  • Current Consumption
    1.6 A
  • Quiscent Current
    45 to 360 mA
  • Technology
    GaN
  • Dimensions
    3.57 x 2.57 x 0.50 Inches
  • Connectors
    SMA, SMA - Female
  • Input Connector
    SMA - Female
  • Output Connector
    SMA - Female
  • DC Connectors
    Micro-D, 9-pin Socket
  • Weight
    2.6 Oz
  • Cooling Options
    Adequate Heatsink Required
  • Operating Temperature
    -40 to 85 Degree C
  • Storage Temperature
    -60 to 100 Degree C
  • Note
    Switching speed : 2 µS, Efficiency : 25 %

Technical Documents