NPA2004-DE

RF Amplifier by Nxbeam Inc (21 more products)

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The NPA2004-DE from Nxbeam is a Ka-band GaN Power Amplifier MMIC that operates from 25 to 27.5 GHz. It delivers an output power of 46 dBm (40 W) with a small signal gain of 24 dB and a power-added efficiency (PAE) of 34%. This amplifier is fabricated on a 0.2 μm GaN HEMT on SiC process. It is available as a fully-passivated die that measures 5.0 x 4.0 x 0.1 mm with RF input and output matched to 50 ohms and DC blocking capacitors for easy system integration. The amplifier has bond pad and backside metallization that are Au-based for compatibility with eutectic die attachment methods. It is ideal for Ka-band satellite communications, 5G mmWave (n257) and point-to-point/multipoint digital radio applications.

Product Specifications

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Product Details

  • Part Number
    NPA2004-DE
  • Manufacturer
    Nxbeam Inc
  • Description
    40 W GaN Power Amplifier MMIC from 25 to 27.5 GHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    Die
  • Application
    Satellite, 5G, Point-to-Multipoint, Point-to-Point
  • Display Application
    5G mmWave n257 Band
  • Standards Supported
    5G
  • Industry Application
    SATCOM, Cellular, Broadcast
  • Frequency
    25 to 27.5 GHz
  • Power Gain
    20 dB
  • Small Signal Gain
    24 dB
  • Grade
    Commercial
  • Saturated Power
    35.1 to 36.2 dBm
  • Saturated Power
    40 W
  • Input Power
    26 dBm
  • PAE
    34 %
  • Impedance
    50 Ohms
  • Pulsed/CW
    CW
  • Sub-Category
    GaN Amplifier
  • Input Return Loss
    8 dB
  • Output Return Loss
    4 dB
  • Supply Voltage
    26 V
  • Current Consumption
    2.1 A
  • Transistor Technology
    0.2um GaN HEMT on SiC
  • Technology
    GaN
  • Package Type
    Surface Mount
  • Dimensions
    5.0 x 4.0 x 0.1 mm

Technical Documents