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  5. A2I09VD030N

The A2I09VD030N from NXP Semiconductors is a RF Amplifier with Frequency 920 to 960 MHz, Gain 34.4 to 34.5 dB, Power Gain 32 to 35 dB, Gain Flatness 0.2 dB, Output Power 45.19 dBm. Tags: Chip, Power Amplifier. More details for A2I09VD030N can be seen below.

Product Specifications

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Product Details

  • Part Number
    A2I09VD030N
  • Manufacturer
    NXP Semiconductors
  • Description
    RF LDMOS Wideband Integrated Power Amplifier, 920 to 960 GHz

General Parameters

  • Type
    Power Amplifier
  • Configuration
    IC/MMIC/SMT
  • Application
    Base Station
  • Standards Supported
    WCDMA
  • Industry Application
    Wireless Infrastructure, Cellular
  • Frequency
    920 to 960 MHz
  • Gain
    34.4 to 34.5 dB
  • Power Gain
    32 to 35 dB
  • Gain Flatness
    0.2 dB
  • Output Power
    45.19 dBm
  • Output Power
    33.04 W
  • P1dB
    45.19 dBm
  • P1dB
    33.3 W
  • IM3
    130 MHz
  • Output Power CW
    33 to 44.5 W
  • PAE
    18.5 to 19.8 %
  • Impedance
    50 Ohms
  • Pulsed/CW
    CW/Pulsed
  • Duty Cycle
    0.1
  • VSWR
    10.00:1
  • Supply Voltage
    48 V
  • Quiscent Current
    46 to 154 mA
  • Transistor Technology
    LDMOS
  • Package Type
    Chip
  • Operating Temperature
    -40 to 125 Degree C
  • Storage Temperature
    -65 to 150 Degree C
  • RoHS
    Yes
  • Note
    P3dB : 40.5 W

Technical Documents
View details on the manufacturer's website
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