The A2I20D020N from NXP Semiconductors is a RF LDMOS Amplifier that operates from 1.4 to 2.2 GHz. It delivers 2.5 Watts of output power with a gain of 31 dB and an efficiency of 19.7%. This wideband integrated circuit is designed with on-chip matching and its multi-stage structure is rated for 20 to 32 V operation. It covers all typical cellular base station modulation formats. The amplifier has Integrated Quiescent Current Temperature Compensation with Enable/Disable Functionality. The RF Decoupled Drain Pins Reduce Overall Board Space.
