The AFSC5G35D35 from NXP is a Doherty Power Amplifier that operates from 3.4 to 3.6 GHz. It provides an output power of 3 watts with a gain of 25.3 dB while operating from a 24 V DC supply. This field-proven LDMOS power amplifier is designed for TDD and FDD LTE systems. The amplifier is available in a 10 x 6 mm surface-mount package and is ideal for wireless infrastructure applications including massive MIMO systems, outdoor small cells, and low power remote radio heads.

Product Specifications

View similar products

Product Details

  • Part Number
    AFSC5G35D35
  • Manufacturer
    NXP Semiconductors
  • Description
    Doherty Power Amplifier Module from 3.4 to 3.6 GHz for TDD and FDD LTE Systems

General Parameters

  • Type
    Power Amplifier
  • Configuration
    IC/MMIC/SMT
  • Application
    Small Cell
  • Standards Supported
    4G/LTE, TDD, FDD, 5G
  • Industry Application
    Cellular, Wireless Infrastructure
  • Frequency
    3.4 to 3.6 GHz
  • Gain
    24.7 to 25.3 dB
  • Input Power
    30 dBm
  • Input Power
    1 W
  • PAE
    35.4 to 37.1%
  • Impedance
    50 Ohms
  • Pulsed/CW
    CW/Pulsed
  • Pulse Width
    10 usec
  • Duty Cycle
    10%
  • Modulation
    AM, PM
  • Sub-Category
    Doherty Amplifier
  • Supply Voltage
    24 Vdc
  • Transistor Technology
    LDMOS
  • Package Type
    Surface Mount
  • Dimensions
    10 mm x 6 mm
  • Storage Temperature
    -65 to 150 Degree C
  • RoHS
    Yes

Technical Documents