The AFSC5G35D37 from NXP Semiconductors is a Fully Integrated Doherty Power Amplifier Module that operates from 3.4 to 3.6 GHz. This field-proven LDMOS power amplifier is designed for TDD and FDD LTE systems. It provides an output power of 5 watts with a gain of 29 dB while operating from a 30 V DC supply. The amplifier is available in a 10 x 6 mm surface-mount package and is ideal for wireless infrastructure applications including massive MIMO systems, outdoor small cells, and low power remote radio heads.

Product Specifications

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Product Details

  • Part Number
    AFSC5G35D37
  • Manufacturer
    NXP Semiconductors
  • Description
    Power Amplifier Module from 3.4 to 3.6 GHz for LTE & 5G Applications

General Parameters

  • Type
    Power Amplifier
  • Configuration
    IC/MMIC/SMT
  • Application
    Small Cell, Radio
  • Standards Supported
    4G/LTE, TDD, FDD, 5G
  • Industry Application
    Wireless Infrastructure, Broadcast, Cellular
  • Frequency
    3.4 to 3.6 GHz
  • Gain
    29.2 to 29.4 dB
  • Input Power
    30 dBm
  • Input Power
    1 W
  • PAE
    38.6 to 39.2%
  • Impedance
    50 Ohms
  • Pulsed/CW
    CW/Pulsed
  • Pulse Width
    10 usec
  • Duty Cycle
    10%
  • Modulation
    AM, PM
  • Sub-Category
    Doherty Amplifier
  • Supply Voltage
    30 V
  • Transistor Technology
    LDMOS
  • Package Type
    Surface Mount
  • Dimensions
    10 mm x 6 mm
  • Storage Temperature
    -65 to 150 Degree C
  • RoHS
    Yes

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