The AFSC5G37D37 from NXP is a fully integrated Doherty power amplifier module designed for wireless infrastructure applications from 3.6 to 3.8 GHz. This amplifier provides up to 5.7 watts of average output power with a gain of 29.5 dB and an efficiency of 39.3% at 3600 MHz. It requires a 29 VDC supply and is internally matched to 50 ohms.

This LDMOS power amplifier has been developed for TDD and FDD LTE systems. It has integrated ESD protection and can operate at temperatures up to 150 degrees C. The AFSC5G37D37 is available in a surface mount package that measures 10 x 6 mm and is ideal for massive MIMO systems, outdoor small cells, and low power remote radio heads applications.

Product Specifications

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Product Details

  • Part Number
    AFSC5G37D37
  • Manufacturer
    NXP Semiconductors
  • Description
    3.6 to 3.8 GHz LDMOS Amplifier for LTE and 5G Applications

General Parameters

  • Type
    Power Amplifier
  • Configuration
    IC/MMIC/SMT
  • Application
    Small Cell, Radio
  • Standards Supported
    4G/LTE, TDD, FDD, 5G
  • Industry Application
    Wireless Infrastructure, Broadcast, Cellular
  • Frequency
    3.6 to 3.8 GHz
  • Gain
    29.5 to 29.9 dB
  • Input Power
    30 dBm
  • Input Power
    1 W
  • PAE
    37.6 to 39.3%
  • Impedance
    50 Ohms
  • Pulsed/CW
    CW/Pulsed
  • Pulse Width
    10 usec
  • Duty Cycle
    10%
  • Modulation
    AM, PM
  • Sub-Category
    Doherty Amplifier, Pulsed Amplifier
  • Supply Voltage
    29 Vdc
  • Transistor Technology
    LDMOS
  • Package Type
    Surface Mount
  • Dimensions
    10 x 6 mm
  • Storage Temperature
    -65 to 150 Degree C
  • RoHS
    Yes

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