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  5. BGS8H2

The BGS8H2 from NXP Semiconductors is a RF Amplifier with Frequency 2300 to 2690 MHz, Gain 12.5 dB, Power Gain -4.5 to -0.8 dB(Bypass) / 9.2 to 14.5 dB, Noise Figure 1 to 1.6 dB, IP3 -2 to 4 dBm. Tags: Surface Mount, Low Noise Amplifier. More details for BGS8H2 can be seen below.

Product Specifications

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Product Details

  • Part Number
    BGS8H2
  • Manufacturer
    NXP Semiconductors
  • Description
    Low Noise Amplifier with bypass switch from 2300 to 2690 MHz

General Parameters

  • Type
    Low Noise Amplifier
  • Configuration
    IC/MMIC/SMT
  • Application
    Mobile, Communication
  • Standards Supported
    4G/LTE
  • Industry Application
    Cellular
  • Frequency
    2300 to 2690 MHz
  • Gain
    12.5 dB
  • Power Gain
    -4.5 to -0.8 dB(Bypass) / 9.2 to 14.5 dB
  • Noise Figure
    1 to 1.6 dB
  • IP3
    -2 to 4 dBm
  • Input Power
    26 dBm
  • Input Power
    0.39 W
  • Impedance
    50 Ohms
  • Pulsed/CW
    CW
  • Reverse Isolation
    22 dB
  • Input Return Loss
    7.5 to 12 dB
  • Output Return Loss
    7 to 12 dB
  • Supply Voltage
    1.5 to 3.1 V
  • Current Consumption
    0.001 to 7.8 mA
  • Technology
    SiGe:C
  • Package Type
    Surface Mount
  • Package
    SOT1232
  • Dimensions
    1.1 x 0.7 x 0.37 mm
  • Operating Temperature
    -40 to 85 Degree C (ambient temperature)
  • Storage Temperature
    -65 to 150 Degree C
  • Note
    Input P1dB : -9.5 to 0 dBm (input power at 1 dB), total power dissipation: 55 mW, turn-on time: 0.3 to 1.7 µs

Technical Documents
View details on the manufacturer's website
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