The BGS8M2UK from NXP Semiconductors is a RF Amplifier with Frequency 1.805 to 2.2 GHz, Gain 15.4 to 15.5 dB, Noise Figure 0.75 dB, Output Power -3.5 dBm, Output Power 0.0004 W. Tags: Surface Mount, Low Noise Amplifier. More details for BGS8M2UK can be seen below.

Product Specifications

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Product Details

  • Part Number
    BGS8M2UK
  • Manufacturer
    NXP Semiconductors
  • Description
    SiGe:C Low Noise Amplifier MMIC with bypass switch for LTE

General Parameters

  • Type
    Low Noise Amplifier
  • Configuration
    IC/MMIC/SMT
  • Standards Supported
    4G/LTE
  • Industry Application
    Cellular
  • Frequency
    1.805 to 2.2 GHz
  • Gain
    15.4 to 15.5 dB
  • Noise Figure
    0.75 dB
  • Output Power
    -3.5 dBm
  • Output Power
    0.0004 W
  • P1dB
    -3.5 dBm
  • P1dB
    0.0004 W
  • IP3
    2.5 dBm
  • IP3
    0.001 W
  • Input Power
    10 dBm
  • Input Power
    0.01 W
  • Return Loss
    5.5 to 13 dB
  • Output Return Loss
    11 to 12.5 dB
  • Supply Voltage
    1.5 to 3.1 V
  • Current Consumption
    5.8 mA
  • Technology
    SiGe
  • Package Type
    Surface Mount
  • Package
    SOT1445-1
  • Dimensions
    0.69 mm x 0.44 mm x 0.2 mm

Technical Documents