The BGU8M1 from NXP Semiconductors is a RF Amplifier with Frequency 1805 to 2200 MHz, Gain 13 dB, Power Gain 11 to 15 dB, Noise Figure 0.8 to 1.4 dB, IP3 -4 to 6 dBm. Tags: Surface Mount, Low Noise Amplifier. More details for BGU8M1 can be seen below.

Product Specifications

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Product Details

  • Part Number
    BGU8M1
  • Manufacturer
    NXP Semiconductors
  • Description
    Low Noise Amplifier from 1805 to 2200 MHz

General Parameters

  • Type
    Low Noise Amplifier
  • Configuration
    IC/MMIC/SMT
  • Application
    Mobile, Communication, Radio
  • Standards Supported
    4G/LTE
  • Industry Application
    Cellular, Broadcast
  • Frequency
    1805 to 2200 MHz
  • Gain
    13 dB
  • Power Gain
    11 to 15 dB
  • Noise Figure
    0.8 to 1.4 dB
  • IP3
    -4 to 6 dBm
  • Input Power
    26 dBm
  • Input Power
    0.39 W
  • Impedance
    50 Ohms
  • Pulsed/CW
    CW
  • Reverse Isolation
    20 dB
  • Input Return Loss
    7 to 9 dB
  • Output Return Loss
    18 to 20 dB
  • Supply Voltage
    1.5 to 3.1 V
  • Current Consumption
    0.001 to 7 mA
  • Technology
    SiGe:C
  • Package Type
    Surface Mount
  • Package
    SOT1232
  • Dimensions
    1.1 x 0.7 x 0.37 mm
  • Operating Temperature
    -40 to 85 Degree C (ambient temperature)
  • Storage Temperature
    -65 to 150 Degree C
  • Note
    Input P1dB : -12 to -2 dBm (input power at 1 dB), total power dissipation: 55 mW, turn-on time: 1 to 4 µs

Technical Documents