The LTE3401H from NXP Semiconductors is a RF Amplifier with Frequency 1452 to 2690 MHz, Gain 19.5 dB, Power Gain -3 to -1.8 dB(Bypass) / 14.7 to 21.7 dB, Noise Figure 0.55 to 1.3 dB, IP3 -5 to 4.5 dBm. Tags: Surface Mount, Low Noise Amplifier. More details for LTE3401H can be seen below.

Product Specifications

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Product Details

  • Part Number
    LTE3401H
  • Manufacturer
    NXP Semiconductors
  • Description
    Low Noise Amplifier with bypass switch from 1452 to 2690 MHz

General Parameters

  • Type
    Low Noise Amplifier
  • Configuration
    IC/MMIC/SMT
  • Application
    Mobile, Communication
  • Standards Supported
    4G/LTE
  • Industry Application
    Cellular
  • Frequency
    1452 to 2690 MHz
  • Gain
    19.5 dB
  • Power Gain
    -3 to -1.8 dB(Bypass) / 14.7 to 21.7 dB
  • Noise Figure
    0.55 to 1.3 dB
  • IP3
    -5 to 4.5 dBm
  • Input Power
    23 to 26 dBm
  • Input Power
    0.19 to 0.39 W
  • Impedance
    50 Ohms
  • Pulsed/CW
    CW
  • Reverse Isolation
    25 to 34 dB
  • Input Return Loss
    8 to 15 dB
  • Output Return Loss
    8 to 15 dB
  • Supply Voltage
    1.5 to 3.1 V
  • Current Consumption
    0.001 to 16.8 mA
  • Technology
    SiGe:C
  • Package Type
    Surface Mount
  • Package
    SOT1232
  • Dimensions
    1.1 x 0.7 x 0.37 mm
  • Operating Temperature
    -40 to 85 Degree C (ambient temperature)
  • Storage Temperature
    -65 to 150 Degree C
  • Note
    Input P1dB : -18 to -7.5 dBm (input power at 1 dB), turn-on time: 1 µs

Technical Documents