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  5. MMA20312BV

The MMA20312BV from NXP Semiconductors is a RF Amplifier with Frequency 1.8 to 2.2 GHz, Power Gain 27.2 dB, Small Signal Gain 25.5 to 28.8 dB, Noise Figure 3.3 dB, Output Power 30.5 dBm. Tags: Surface Mount, Driver Amplifier, Power Amplifier. More details for MMA20312BV can be seen below.

Product Specifications

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Product Details

  • Part Number
    MMA20312BV
  • Manufacturer
    NXP Semiconductors
  • Description
    InGaP HBT Linear Amplifier, 1800 -2200 MHz, 27.2 dB, 30.5 dBm

General Parameters

  • Type
    Driver Amplifier, Power Amplifier
  • Configuration
    IC/MMIC/SMT
  • Standards Supported
    CDMA, TD-SCDMA, PCS, UMTS, 4G/LTE
  • Frequency
    1.8 to 2.2 GHz
  • Power Gain
    27.2 dB
  • Small Signal Gain
    25.5 to 28.8 dB
  • Noise Figure
    3.3 dB
  • Output Power
    30.5 dBm
  • Output Power
    1.12 W
  • P1dB
    30.5 dBm
  • P1dB
    1.12 W
  • Input Power
    14 dBm
  • Input Power
    0.03 W
  • Class
    Class AB
  • Impedance
    50 Ohms
  • Pulsed/CW
    CW
  • Sub-Category
    Linear Amplifier
  • Input Return Loss
    -17.6 to -9.7 dB
  • Output Return Loss
    -20.3 to -13.7 dB
  • Supply Voltage
    3.3 to 5.0 V
  • Current Consumption
    Supply current: 550 mA
  • Transistor Technology
    InGaP, HBT
  • Technology
    InGaP, HBT
  • Package Type
    Surface Mount
  • Package
    QFN 3 x 3
  • Storage Temperature
    -65 to 150 Degree C
  • RoHS
    Yes

Technical Documents
View details on the manufacturer's website
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