1. everything RF
  2. RF Components
  3. Amplifiers
  4. NXP Semiconductors
  5. MMG20271H9

The MMG20271H9 from NXP Semiconductors is a RF Amplifier with Frequency 1.5 to 2.7 GHz, Power Gain 16 dB, Small Signal Gain 14.3 to 18 dB, Noise Figure 1.5 dB, Output Power 27.5 dBm. Tags: Surface Mount, Low Noise Amplifier, Power Amplifier. More details for MMG20271H9 can be seen below.

Product Specifications

View similar products

Product Details

  • Part Number
    MMG20271H9
  • Manufacturer
    NXP Semiconductors
  • Description
    E pHEMT GPA/LNA, 1500 2700 MHz, 16 dB, 27.5 dBm

General Parameters

  • Type
    Low Noise Amplifier, Power Amplifier
  • Configuration
    IC/MMIC/SMT
  • Application
    Base Station
  • Standards Supported
    PCS, 4G/LTE, TD-SCDMA, WCDMA
  • Industry Application
    Cellular
  • Frequency
    1.5 to 2.7 GHz
  • Power Gain
    16 dB
  • Small Signal Gain
    14.3 to 18 dB
  • Noise Figure
    1.5 dB
  • Output Power
    27.5 dBm
  • Output Power
    0.56 W
  • P1dB
    27.5 dBm
  • P1dB
    0.56 W
  • IP3
    Input: 23 to 29.9 dBm, 43.1 dBm
  • IP3
    Input: 23 to 29.9 dBm, 43.1 dBm
  • Input Power
    25 dBm
  • Input Power
    0.32 W
  • Class
    Class A
  • Impedance
    50 Ohms
  • Pulsed/CW
    CW
  • Sub-Category
    Linear Amplifier
  • Input Return Loss
    -18.5 to -11 dB
  • Output Return Loss
    -35 to -24 dB
  • Supply Voltage
    5 V
  • Current Consumption
    Supply current: 215 mA
  • Transistor Technology
    E-pHEMT
  • Technology
    E-pHEMT
  • Package Type
    Surface Mount
  • Package
    SOT-89
  • Storage Temperature
    -65 to 150 Degree C
  • RoHS
    Yes

Technical Documents
View details on the manufacturer's website
View similar products